Tungsten , sputtering target, diam. x thickness 2.00 in. x 0.25 in., 99.95% trace metals basis

Code: 767522-1EA D2-231

Application

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturizatio...


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Application

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition.

Packaging

1 ea in rigid mailer

assay99.95% trace metals basis
bp5660 °C (lit.)
density19.3 g/mL at 25 °C (lit.)
diam. × thickness2.00 in. × 0.25 in.
formpieces
InChI keyWFKWXMTUELFFGS-UHFFFAOYSA-N
InChI1S/W
mp3410 °C (lit.)
Quality Level100
reaction suitabilitycore: tungsten
resistivity4.9 µΩ-cm, 20°C
SMILES string[W]
Cas Number7440-33-7
This product has met the following criteria: