Application

Precursors Packaged for Depositions Systems

TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO₂) and hafnium zirconium oxide (Hf₁-xZrxO₂), which are used as dielectric films in semiconductor fabrication because of their high dielectric constants. TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS₂. TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.

Features and Benefits

This TEMAH is packaged in a Swagelok stainless-steeldeposition system convenient for connecting to ALD systems. Steel cylinder connected to 316 stainless steelball-valve 1/4 inch male Swagelok VCR connections

General description

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.

Packaging

10 g in stainless steel cylinder