Application
Useful for fast and controllable etching of silicon nitride (Si3N4), galium nitride (GaN), or aluminum oxide (Al2O3).
Features and Benefits
Etch Rates @ 180 °C:Aluminum oxide 120 Å/min Silicon nitride 125 Å/min Gallium nitride 80 Å/min Silicon dioxide 1 Å/min Silicon 1 Å/min
Packaging
500 mL in glass bottle
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